unisonic technologies co., ltd up1855a pnp silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2015 unisonic technologies co., ltd qw-r207-020.f high current transistor ? features * high current switching * low v ce(sat) * high h fe sot-223 to-126 1 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - up1855ag-x-aa3-r sot-223 b c e tape reel up1855al-x-t60-k up1855ag-x-t60-k to-126 e c b bulk note: pin assignment: e: emitte r b: base c: case ? marking sot-223 to-126
up1855a pnp silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r207-020.f ? absoluate maxium ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit collector -base voltage v cbo -180 v collector -emitter voltage v ceo -170 v emitter -base voltage v ebo -6 v collector current (pulse) i cm -10 a collector current (dc) i c -4 a power dissipation sot-223 p d 1 w to-126 1 junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a = 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c = -100a -180 -210 v collector-emitter breakdown voltage bv ceo i c = -10ma -170 v emitter-base breakdown voltage bv ebo i e = -100a -6 -8 v collector cut-off current i cbo v cb =-150v -50 na v cb =-150v, ta=100c -1 a emitter cut-off current i ebo v eb =-6v -10 na collector-emitter satu ration voltage v ce (sat) i c =-100ma, i b =-5ma -30 -60 mv i c =-500ma, i b =-50ma -70 -120 mv i c =-1a, i b =-100ma -110 -150 mv i c =-3a, i b =-300ma -275 -550 mv base-emitter satura tion voltage v be ( sat ) i c =-3a, i b =-300ma -970 -1110 mv base-emitter turn -on voltage v be ( on ) i c =-3a, v ce =-5v -830 -950 mv dc current gain h fe1 i c =-10ma, v ce =-5v 100 200 h fe2 i c =-1a, v ce =-5v 100 300 h fe3 i c =-3a, v ce =-5v 28 140 h fe4 i c =-10a, v ce =-5v 10 transition frequency f t i c =-100ma, v ce =-10v, f=50mhz 110 mhz output capacitance cob v cb =-20v, f=1mhz 40 pf switching times t on i c =-1a, v cc =-50v 68 ns t off i b1 =-100ma, i b2 =100ma 1030 ns note: pulse test: t p 300s, duty cycle 2% ? classification of h fe3 rank a b range 28~75 75(min.)
up1855a pnp silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r207-020.f ? typical characteristics collector-emitter saturation voltage v ce(sat) (v) collector-emitter saturation voltage v ce(sat) (v) base-emitter turn-on voltage, v be(on) (v) base-emitter saturation voltage v be(sat) (v) dc current gain, h fe collector current, ic (a)
up1855a pnp silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r207-020.f utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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